| PART |
Description |
Maker |
| NPA1003 NPA1003-15 |
Gallium Nitride 28V, 5W, 20-1500 MHz MMIC Amplifier
|
M/A-COM Technology Solution...
M/A-COM Technology Solu...
|
| AML59P4512 |
Gallium Nitride (GaN)
|
Microsemi
|
| AML1416P4511 |
Gallium Nitride (GaN)
|
Microsemi
|
| AML811P5011 |
Gallium Nitride (GaN)
|
Microsemi
|
| NPT2021-DC-2P2GHZ-50W NPT2021-15 |
Gallium Nitride 48V, 50W, DC-2.2 GHz HEMT
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
|
| CRCC1206100F100KEA CRCC1206100F100KTF CRCC1206100F |
RC NETWORK, ISOLATED, 0.125W, 110000ohm, 50V, 0.000068uF, SURFACE MOUNT, CHIP-2
RC NETWORK, ISOLATED, 0.125W, 110000ohm, 50V, 0.00068uF, SURFACE MOUNT, CHIP-2
RC NETWORK, ISOLATED, 0.125W, 22ohm, 50V, 0.000022uF, SURFACE MOUNT, CHIP-2
RC NETWORK, ISOLATED, 0.125W, 68000ohm, 50V, 0.00015uF, SURFACE MOUNT, CHIP-2
RC NETWORK, ISOLATED, 0.125W, 68000ohm, 50V, 0.0001uF, SURFACE MOUNT, CHIP-2
RC NETWORK, ISOLATED, 0.125W, 68000ohm, 50V, 0.000015uF, SURFACE MOUNT, CHIP-2
RC NETWORK, ISOLATED, 0.125W, 68000ohm, 50V, 0.00027uF, SURFACE MOUNT, CHIP-2
RC NETWORK, ISOLATED, 0.125W, 68000ohm, 50V, 0.00022uF, SURFACE MOUNT, CHIP-2
RC NETWORK, ISOLATED, 0.125W, 510000ohm, 50V, 0.000068uF, SURFACE MOUNT, CHIP-2
RC NETWORK, ISOLATED, 0.125W, 910000ohm, 50V, 0.00068uF, SURFACE MOUNT, CHIP-2
Thick Film, Rectangular, Resistor/Capacitor Chip
|
Vishay Siliconix
VISHAY DALE
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| DGS9-03AS DGS10-03A |
Gallium Arsenide Schottky Rectifier 11 A, 300 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-220AC
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| 0809LD30P |
Compant High-Insulation Power Relay, Polarized, 10A
30 Watt / 28V / 1 Ghz LDMOS FET
30 WATT 28V 1 GHz LDMOS FET
30 WATT, 28V, 1 GHz LDMOS FET
|
Electronic Theatre Controls, Inc.
GHZ Technology
ETC[ETC]
List of Unclassifed Manufacturers
|
| DSEP30-06A DGS19-025AS DGSK40-025A DGSK40-025AS DG |
Gallium Arsenide Schottky Rectifier 18 A, 250 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-263AB
HiPerFRED Epitaxial Diode with soft recovery
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| RFP-20N50TPC |
Aluminum Nitride Terminations
|
Anaren Microwave
|
| RFP-20N50TPR |
Aluminum Nitride Terminations
|
Anaren Microwave
|
|
